METHOD FOR FORMING LAMINATED STRUCTURE INCLUDING INSULATING LAYER AND ORGANIC SEMICONDUCTOR LAYER, ORGANIC FIELD-EFFECT TRANSISTOR, AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an organic field-effect transistor manufacturing method for manufacturing an organic field-effect transistor with high performance by raising crystalline property in an organic semiconductor layer constituting a channel forming region. SOLUTION: The method for manufacturing the organic field-effect transistor (the bottom gate/bottom gate type and bottom gate/top gate type organic field-effect transistors) includes a process for forming a gate electrode 12 on a support body 10; forming a gate insulating layer 13 on a support body 10 and the gate electrode 12 (A); and forming a source/drain electrode 14 and the organic semiconductor layer 15 made of an organic semiconductor material, so as to constitute the channel forming region 16 on the gate insulating layer 13 (B). The gate insulating layer 13 is formed by applying a solution, which is obtained by mixing a polymeric material as an insulating material with a finishing agent on the support body 10 and the gate electrode 12, and drying them. COPYRIGHT: (C)2007,JPO&INPIT