| 摘要 |
A ZnO bulk single crystal of the invention has n-type conductivity with a maximum resistivity of one (1) ohm-centimeter (Omega-cm). N-type conductivity is achieved through introduction of dopants in the formation of the crystal using a Bridgeman growth technique. The dopants can be a single species or combination of species from Group III, Group VII, Lanthanides, Actinides, Transition metals, or other element or combination of elements resulting in a net positive addition of carriers, i.e. free electrons, to the crystal. Dopant concentration ranges from 1x10<SUP>15 </SUP>to 5x10<SUP>21 atoms</SUP>/cc. The maximum resistivity at which doped ZnO will exhibit enhanced n-type behavior is one (1) Omega-cm at room temperature, so dopant concentrations used to form the crystal are present in an amount that yields this result. The conductivity of the ZnO crystal can be tailored due to the general trend of increasing dopant concentration providing increasing conductivity. The crystal can be cut and polished to produce one or more wafers.
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