发明名称 APPARATUS AND METHOD FOR REPAIRING A SEMICONDUCTOR MEMORY
摘要 <p>An apparatus and method for repairing a semiconductor memory device includes a first memory cell array, a first redundant cell array and a repair circuit configured to nonvolatilely store a first address designating at least one defective memory cell in the first memory cell array. A first volatile cache stores a first cached address corresponding to the first address designating the at least one defective memory cell. The repair circuit distributes the first address designating the at least one defective memory cell of the first memory cell array to the first volatile cache. Match circuitry substitutes at least one redundant memory cell from the first redundant cell array for the at least one defective memory cell in the first memory cell array when a first memory access corresponds to the first cached address.</p>
申请公布号 WO2007005218(A1) 申请公布日期 2007.01.11
申请号 WO2006US23219 申请日期 2006.06.14
申请人 MICRON TECHNOLOGY, INC.;MARTIN, CHRIS, G.;MANNING, TROY, A.;KEETH, BRENT 发明人 MARTIN, CHRIS, G.;MANNING, TROY, A.;KEETH, BRENT
分类号 G11C29/00 主分类号 G11C29/00
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