HIGH PERFORMANCE ORGANIC THIN FILM TRANSISTOR

摘要

An organic thin film transistor has a gate electrode, a gate insulator formed on the gate electrode, a layer of organic semiconducting material formed on the gate insulator, a source electrode formed on the layer of organic semiconducting material, and a drain electrode formed on the layer of organic semiconducting material. The source electrode and/or the drain electrode have a layer of transition-metal oxide formed on the organic semiconducting material and a layer of metal formed on the layer of transition-metal oxide. A method of producing an organic thin film transistor includes providing a gate electrode, forming a gate insulator on the gate electrode, forming a layer of semiconducting material on the gate insulator, forming a source electrode on the layer of organic semiconducting material, and forming a drain electrode on the layer of organic semiconducting material. Forming the source electrode and/or forming the drain electrode include forming a layer of transition-metal oxide on the organic semiconducting material and forming a layer of metal on the layer of transition-metal oxide.