发明名称 |
ETCHING AGENT, ETCHING METHOD, AND FORMED LAMINATE AND DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide an etching agent used for a chemical wet etching method of chemical-resistant crystal material. <P>SOLUTION: The etching agent is provided containing a cryolite (Na<SB>3</SB>AlF<SB>6</SB>) and a halogen salt like a potassium tetrafluoroborate (KBF<SB>4</SB>). The salt exists in the etching agent in sufficient amount for etching a support layer, and can have a melting temperature exceeding about 200°C. The wet etching method includes the steps of contacting the etching agent containing the cryolite and/or the potassium tetrafluoroborate on one or more surfaces of the support layer 130 containing the aluminum oxide of a multilayer laminate, and then etching at least the part of the support layer 130. An independent laminate is provided containing a gallium nitride manufactured by crystal growth on the aluminum oxide support layer 130. <P>COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2007005752(A) |
申请公布日期 |
2007.01.11 |
申请号 |
JP20050337984 |
申请日期 |
2005.11.24 |
申请人 |
GENERAL ELECTRIC CO <GE> |
发明人 |
STEVEN ALFRED TYSOE;STEVEN FRANCIS LEBOEUF;DEVELYN MARK PHILIP;VENKAT SUBRAMANIAM VENKATARAMANI;VINAYAK TILAK;FORTIN JEFFREY BERNARD;BECKER CHARLES A;ARTHUR STEPHEN D;SAMHITA DASGUPTA;SUBRAMANIAN KANAKASABAPATHI;ROBERT JOHN WOJNAROWSKI;EBONG ABASIFREKE U |
分类号 |
H01L21/306;H01L29/84;H01L33/00 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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