| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device for power capable of preventing breakage of a power device by eliminating vertical conductive state due to malfunction. <P>SOLUTION: An element voltage detecting circuit 27 detects that a voltage of a specified node of a level shift circuit in a high-side drive circuit 2 has become high due to malfunction of the high-side drive circuit 2 caused by dv/dt or noise. The output signal of the element voltage detecting circuit 27 is supplied to a cut-off process circuit 30 via a NAND circuit 28 that is controlled by a delay circuit 29, so that a power device 5 on low-side is forcedly cut off. Thus, simultaneous conduction of the power devices 4 and 5 is avoided, and the power devices 4 and 5 are protected from breakage caused by simultaneous conduction of the power devices 4 and 5. <P>COPYRIGHT: (C)2007,JPO&INPIT |
