| 摘要 |
PROBLEM TO BE SOLVED: To reduce the manufacturing cost by achieving a flip-chip process for a power device without carrying out advanced metalworking, and achieving the flip-chip process using a commonly used semiconductor device processing technology. SOLUTION: The semiconductor device includes an MOS power device having a gate electrode and a source electrode on the front face of a substrate and a drain electrode on the rear face of the substrate, a conducting element having a low resistance region for connecting the front face to the rear face, and a fixing substrate having an electrically conductive layer on at least a part of the front face thereof. The MOS power device and the conducting element are mounted on the fixing substrate and are bonded together, thereby leading out the drain electrode of the MOS power device to the surface through the fixing substrate. A metal plate may be used as the conducting element. COPYRIGHT: (C)2007,JPO&INPIT |
