| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing silicon single crystals, by which the exfoliation of a crystal phase formed on the inner surface of a quartz crucible can be prevented, a large diameter single crystal can be stably pulled, and a plurality of single crystals can be continuously pulled by using a same crucible. <P>SOLUTION: When polycrystalline silicon is melted in a quartz crucible 1 and a single crystal 11 is pulled from the obtained melt 10 by a CZ method, the inner surface of the quartz crucible is electrified and a quartz crucible 1 obtained by uniformly sticking barium carbonate 5 on the electrified surface is used. It is preferable that the inner surface of the quartz crucible is electrified by utilizing discharge (corona discharge), the concentration of barium on the inner surface of the quartz crucible is set to be≤10μg/cm<SP>2</SP>, and the pulling of the single crystal is performed within 5 h after the crucible is electrified. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
