发明名称 SEMICONDUCTOR PROCESS SIMULATION DEVICE AND SEMICONDUCTOR PROCESS SIMULATION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor process simulation device and a semiconductor process simulation method capable of acquiring the same effect as that of three-dimensional simulation with respect to a specified region by specifying a specific simulation region, in two-dimensional semiconductor process simulation. SOLUTION: The semiconductor process simulation device comprises a region specifying means for specifying a simulation region about a part of two-dimensional structure information on a semiconductor device; and a pseudo three-dimensional manufacturing process condition specifying part for specifying a process condition which has an effect of a three-dimensional manufacturing process about a simulation region specified by the region specifying means. Accordingly, it is made possible to perform the simulation of a shape change resulting from three-dimensional structure, which has not been able to be dealt with by two-dimensional simulation until now. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007005488(A) 申请公布日期 2007.01.11
申请号 JP20050182462 申请日期 2005.06.22
申请人 TOSHIBA CORP 发明人 AOKI NOBUTOSHI;KUSUNOKI NAOKI
分类号 H01L21/00 主分类号 H01L21/00
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