发明名称 |
NON-VOLATILE MEMORY CELL AND OPERATING METHOD THEREOF |
摘要 |
A non-volatile memory is described. The non-volatile memory includes a first source/drain region, a second source/drain region, a charge-trapping layer and a gate layer. The first source/drain region is disposed beside the top sidewall of a trench in a substrate. The second source/drain region is disposed in the substrate at the bottom of the trench. The gate layer is disposed in the trench and on the substrate. The charge-trapping layer is disposed between the gate layer and the substrate. A plurality of assisted charges is stored in one of the sides of the charge-trapping layer.
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申请公布号 |
US2007008777(A1) |
申请公布日期 |
2007.01.11 |
申请号 |
US20060308777 |
申请日期 |
2006.05.03 |
申请人 |
HSUEH MING-HSIANG;KUO MING-CHANG;WU MIN-TA;YU CHAO-LUN |
发明人 |
HSUEH MING-HSIANG;KUO MING-CHANG;WU MIN-TA;YU CHAO-LUN |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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主权项 |
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地址 |
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