| 摘要 |
A method for manufacturing a semiconductor apparatus and a semiconductor apparatus are provided to control generation of a leakage current by forming a protective layer on a dividing part except for a light receiving region that divides a light receiving device, and on a region around the dividing part. An anti-reflection coating is formed on a light receiving region(12) of a light receiving device that is a division type, a dividing unit(8) except for the light receiving region, and region(16) adjacent to the dividing region expert for the light receiving region. The dividing unit divides the light receiving devices. A protection layer(14) is formed on the anti-reflection coating . The protection layer is simultaneously formed on the anti-reflection coating of the light receiving region, on the anti-reflection coating of the dividing unit except for the light receiving region, and the anti-reflection coating of the regions rear the dividing unit except for the light receiving region.
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