| 摘要 |
<p>Integrated circuit comprising a power component (100) with vertical current flow and at least one low or medium voltage component, the at least one low or medium voltage component formed in a first semiconductor layer (111) separated from a second semiconductor layer (102) by an insulating material layer (4). Said power component (100) with vertical current flow is formed in the second semiconductor layer (102), and excavations (23; 66; 71) are formed in the insulating material layer (4) which extend from a free surface of the first semiconductor layer (111) to the second semiconductor layer (102), said excavations (23; 66; 71) having lateral walls of insulating material (104; 65; 72) and being filled up with a conductor material (230) in order to electrically contact active regions (6, 7; 6, 90) of the power component (100) in the second semiconductor layer (102) by electrodes (105; 106) placed on the free surface of the first semiconductor layer (111). <IMAGE></p> |
