LIGHT EMITTING DIODE WITH MG DOPED SUPERLATTICE

摘要

A light emitting device includes multiple alternating layers of Mg doped AlGaN and AlGaN of different Al content forming a superlattice. An electron blocking layer is coupled between a p cladding and contact layer and the multiple alternating layers. An n cladding and contact is coupled to the superlattice opposite the p cladding layer. In one embodiment, the superlattice operates as an additional electron blocking layer. Light is emitted when electrons and holes recombine in the superlattice. The holes may be bound to Mg impurities in the superlattice.