A method for fabricating a semiconductor device is provided to reduce fabricating costs and time loss of a fabricating process by shortening an interval of a wet cleaning period. A wafer(32) is loaded into a chamber having a ceramic dome(34) coated with a material having good etching resistance with respect to plasma. The ceramic dome can be coated with yttrium oxide having good etching resistance with respect to plasma. Etch residue is generated in etching a gate on the wafer. The etch residue is eliminated by using an etching gas having SF6 gas as a main component.
