| 摘要 |
A semiconductor device may include a substrate, an insulating layer on the substrate, and a semiconductor layer on the insulating layer on a side there of opposite the substrate. The semiconductor device may further include a superlattice on the semiconductor layer on a side thereof opposite the insulating layer. The superlattice may include a plurality of stacked groups of layers, with each group comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon. The at least one non-semiconductor monolayer may be constrained within a crystal lattice of adjacent base semiconductor portions.
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