| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing pad used suitably for polishing a semiconductor wafer or the like along with its manufacturing method, of which polishing fine particles can be self-supplied for a higher polishing speed with a flaw hard to occur on a polished surface. <P>SOLUTION: The polishing pad features a polishing layer which is a fine particle laminate film in which polishing fine particles 1 and electrolytic polymers 2 are alternately laminated on a support base material 3. It is manufactured by a process in which, in the polishing layer, the support base material 3 is submerged at least in cation electrolytic polymer solution or cation polishing fine particles dispersion liquid, so that the electrolytic polymers 2 or polishing fine particles 1 are electrostatically adsorbed to the surface; a process to be submerged in anion electrolytic polymer 2 or anion polishing fine particle 1 dispersion liquid thereafter, so that the electrolytic polymers 2 or fine particles 1 are electrostatically adsorbed on the base material surface; and a process in which above stated processes are alternately repeated, so that the electrolytic polymers 2 and polishing fine particle layer 1 having opposite charges are alternately laminated, in multiple layers, on the support base material 3. <P>COPYRIGHT: (C)2007,JPO&INPIT |
