发明名称 ALUMINUM NITRIDE SINTERED COMPACT AND METHOD OF MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide an aluminum nitride sintered compact small in corrosion or wear and remarkably small in the occurrence of particles even when exposed to a halogen based corrosive gas or the plasma under a high temperature. <P>SOLUTION: The aluminum nitride sintered compact contains 99.5 wt.% in total of Al, N and O and comprises AlN as a main crystal phase and a compound containing 3 components of Al, N and O as another crystal phase, wherein the intensity ratio (12/11) of the diffraction peak intensity 12 (lattice of spacing: 2.56-2.62) of the compound to the diffraction peak intensity 11 (lattice of spacing: 2.68-3.71) of the AlN is 1-8% when the sintered compact is measured by X-ray diffraction (emission source of X-ray: copper) and the diffraction peak intensity is controlled not to be existent in the lattice spacing of 1.52-1.537 and the lattice of spacing of the plane (001) of the AlN or that of the plane (002) of AlN. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007001862(A) 申请公布日期 2007.01.11
申请号 JP20060266963 申请日期 2006.09.29
申请人 KYOCERA CORP 发明人 NAKAMURA TSUNEHIKO
分类号 C04B35/581;H01L21/205;H01L21/3065 主分类号 C04B35/581
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