| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element having an active region of a quantum well structure which has a barrier layer made of a group III-V compound semiconductor containing aluminum, gallium, indium, and arsenic so as to be able to reduce a leak current. SOLUTION: A buried semiconductor region 19 includes a first conductivity type buried layer and a second conductivity type buried layer. The second conductivity type buried layer 23 is formed on the side surface 18 of an active region 17. The first conductivity type buried layer 25 is formed on the second conductivity type buried layer 23. The active region 17 has a quantum well structure 31. A barrier layer 29 is formed of a first group III-V compound semiconductor containing aluminum, gallium, indium, and arsenic. The first group III-V compound semiconductor has a band-gap wavelengthλ<SB>Bg</SB>exceeding 1μm. COPYRIGHT: (C)2007,JPO&INPIT
|
