| 摘要 |
A method for testing a memory device having plural memory elements includes performing a succession of operations including: a) writing a test datum into the memory elements according to a first scanning sequence; b) accessing each memory element according to the first scanning sequence, reading a content thereof, comparing the read content to the test datum, and writing thereinto the test datum complement; c) accessing each memory element according to a second scanning sequence, reading a content thereof, comparing the read content to the test datum complement, and writing thereinto the test datum; d) accessing each memory element according to the second scanning sequence, reading a content thereof, comparing the read content to the test datum, writing thereinto the test datum complement, and reading again the content thereof and comparing the read content to the test datum complement.
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