发明名称 INTEGRATED CIRCUIT WITH SEPARATE SUPPLY VOLTAGE FOR MEMORY THAT IS DIFFERENT FROM LOGIC CIRCUIT SUPPLY VOLTAGE
摘要 In one embodiment, an integrated circuit comprises at least one logic circuit supplied by a first supply voltage and at least one memory circuit coupled to the logic circuit and supplied by a second supply voltage. The memory circuit is configured to be read and written responsive to the logic circuit even if the first supply voltage is less than the second supply voltage during use. In another embodiment, a method comprises a logic circuit reading a memory cell, the logic circuit supplied by a first supply voltage; and the memory cell responding to the read using signals that are referenced to the first supply voltage, wherein the memory cell is supplied with a second supply voltage that is greater than the first supply voltage during use.
申请公布号 WO2007005906(A1) 申请公布日期 2007.01.11
申请号 WO2006US26096 申请日期 2006.06.30
申请人 P. A. SEMI, INC.;CAMPBELL, BRIAN, J.;VON KAENEL, VINCENT, R.;SCOTT, GREGORY, S.;SANTHANAM, SRIBALAN;MURRAY, DANIEL, C. 发明人 CAMPBELL, BRIAN, J.;VON KAENEL, VINCENT, R.;SCOTT, GREGORY, S.;SANTHANAM, SRIBALAN;MURRAY, DANIEL, C.
分类号 G11C5/14 主分类号 G11C5/14
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