NON-VOLATILE MEMORY DEVICES AND METHODS OF FORMING THE SAME

摘要

An NVM(non-volatile memory) device is provided to reduce an overlap area between adjacent floating gates by including a flat part and a pair of walls extending upward from both edges of the flat part. An isolation layer is formed in a substrate(100) to define an active region. A floating gate is disposed on the active region by interposing a tunnel insulation layer(115), including a flat part(116a) and a pair of walls extending upward from both edges of the flat part. A control gate electrode(135a) is disposed on the floating gate, covering the outer surface of the wall adjacent to the isolation layer. A blocking insulation pattern(130a) is interposed between the control gate electrode and the floating gate. An impurity doping layer is formed in the active region at both sides of the control gate electrode. A space surrounded by the flat part and the pair of walls is filled with an insulation material. A capping pattern(125b) is included in the space wherein the insulation material filled in the space includes the capping pattern.