| 摘要 |
A method for forming a low-dielectric-constant thin film includes forming on a substrate placed on a susceptor a thin film having a dielectric constant of 2.7 or higher and a modulus of 5 GPa or less by plasma CVD using an organosilicon gas and an additive gas such as C<SUB>n</SUB>H<SUB>2n+2</SUB>O in the absence of oxidizing gas at a susceptor temperature of lower than 350° C.; and curing the thin film with UV irradiation, thereby decreasing the dielectric constant by at least 10% and increasing the modulus by at least 200%.
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