发明名称 Process for the self-limiting deposition of one or more monolayers
摘要 The invention relates to a process for depositing at least one layer, which contains at least one first component, on at least one substrate in a process chamber, first and second starting materials, of which at least the first starting material contains the first component, being introduced in gaseous form into the process chamber in a cyclically alternating manner, in order to deposit substantially only one layer at a time of the first component with every cycle. In order to increase the spectrum of suitable staring materials that are available the invention proposes that a first starting material which does not intrinsically allow itself to be deposited in a self-limiting manner, is used and, a limiter formed of a hydrocarbon is introduced into the process chamber in such a way that the depositing of the first component on the substrate automatically ends after completion of the first layer.
申请公布号 US2007009659(A1) 申请公布日期 2007.01.11
申请号 US20060455372 申请日期 2006.06.19
申请人 BAUMANN PETER;LINDNER JOHANNES;SCHUMACHER MARCUS 发明人 BAUMANN PETER;LINDNER JOHANNES;SCHUMACHER MARCUS
分类号 C23C16/00 主分类号 C23C16/00
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