| 摘要 |
The present invention relates to a method for forming one or more strained semiconductor-on-insulator structures, by first forming a precursor structure that contains an upper layer of unstrained semiconductor material and a lower layer of strained insulating material supported by a semiconductor substrate, and then patterning the upper layer of unstrained semiconductor material and the lower layer of strained insulating material to form one or more islands that each contain an unstrained semiconductor material layer over a strained insulating material layer. Relaxation of the strained insulating material layers in such islands applies strain to the unstrained semiconductor material layers, thus forming one or more strained semiconductor-on-insulator structures. The method of the present invention uses a strained insulating material layer to apply strain to an unstrained semiconductor material layer, and can therefore completely avoid usage of any additional strain-inducing layer in forming strained semiconductor material.
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