An SiC Schottky diode die or a Si Schottky diode die is mounted with its epitaxial anode surface connected to the best heat sink surface in the device package. This produces a substantial increase in the surge current capability of the device.
申请公布号
WO2007005844(A2)
申请公布日期
2007.01.11
申请号
WO2006US26002
申请日期
2006.07.05
申请人
INTERNATIONAL RECTIFIER CORPORATION;CARTA, ROSSANO;MERLIN, LUIGI;RAFFO, DIEGO
