| 摘要 |
PROBLEM TO BE SOLVED: To realize a semiconductor device equipped with a gate protecting function while restraining an increase of an array area in a transistor array equipped with diffusion bit lines and word lines intersecting the bit lines. SOLUTION: A transistor includes a gate electrode 2, a gate insulating film 4, and a diffusion layer constituting the diffusion bit line 5. A bit line insulating film 3 is formed on the diffusion bit line 5. The transistor includes a gate protecting insulating film 6 disposed in the direction of the diffusion bit line in parallel with the bit line insulating film via the same insulating film as the gate insulating film. The gate electrode of the transistor constitutes the word line by being disposed; extended over the gate insulating film, the bit line insulating film, the same insulating film as the gate insulating film; and the gate protecting insulating film, and is connected with a MOS type diode composed of the gate electrode, gate protecting insulating film, and substrate. Withstand voltage of the gate protecting insulating film is lower than that of the gate insulating film. COPYRIGHT: (C)2007,JPO&INPIT
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