| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can increase contact reliability between a through interconnection line and each pad and thereby improve the yield of a chip, and also to provide its manufacturing method. SOLUTION: Inside a through hole 2 penetrated in the thickness direction of a semiconductor substrate 1, the through interconnection line 4 made of a metal (such as copper and nickel) is formed via an insulation film 3. On both end faces in the longitudinal direction of the through interconnection line 4, the pads 5 and 6 are stacked. The insulation film 3 is formed not only on the inner surface of the through hole 2 of the semiconductor substrate 1 but also on both faces in the thickness direction of the semiconductor substrate 1. On both faces of the semiconductor substrate 1, the pads 5 and 6 are so formed as to be extended over the end face of the through interconnection line 4 and the surface of the insulation film 3. The through hole 2 is formed in such a shape that the opening areas may become larger as they come closer to one and the other face sides of the semiconductor substrate 1. COPYRIGHT: (C)2007,JPO&INPIT
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