| 摘要 |
PROBLEM TO BE SOLVED: To reduce an ohmic contact resistance in a wide band gap semiconductor. SOLUTION: A p-type ohmic electrode is provided with an Se layer to maximally lower a barrierΦb of an Se Fermi level Ef and a wide band gap p-type semiconductor valence, so that the wide band gap p-type semiconductor can have an ohmic contact with a resistance far lower than that of a conventional ohmic electrode provided with a metal layer having a high work function. COPYRIGHT: (C)2007,JPO&INPIT
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