| 发明名称 |
Method of treating a substrate in manufacturing a magnetoresistive memory cell |
| 摘要 |
A method of treating a substrate in manufacturing a magnetoresistive memory cell includes performing a cleaning operation on the substrate using a mask layer as a protection layer for etching of a peripheral via. Further, an etch stop layer can used as a protection layer in a cleaning operation on the substrate.
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| 申请公布号 |
US2007010031(A1) |
申请公布日期 |
2007.01.11 |
| 申请号 |
US20050175386 |
申请日期 |
2005.07.07 |
| 申请人 |
OTTOW STEFAN;WOOSIK KIM;LEUSCHNER RAINER |
发明人 |
OTTOW STEFAN;WOOSIK KIM;LEUSCHNER RAINER |
| 分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
| 代理机构 |
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