Silicon film forming apparatus

摘要

A silicon film forming apparatus includes a deposition chamber ( 10 ), a silicon sputter target ( 2 ) arranged in the chamber, a hydrogen gas supply circuit ( 102 or 102 ') supplying a hydrogen gas into the chamber, and a high-frequency power applying device (antenna 1, 1 ', power source PW and others) generating inductively coupled plasma by applying high-frequency power to the gas supplied into the deposition chamber ( 10 ). Chemical sputtering is effected on the target ( 2 ) by the plasma to form a silicon film on a substrate S. A silane gas may be used. A silane gas supply circuit ( 101 ) may be provided with a gas reservoir unit (GR). The silicon film can be formed inexpensively and fast at a relatively low temperature.