Fin field effect transistors (FinFETs) and methods for making the same

摘要

In a first aspect, a first method is provided for semiconductor device manufacturing. The first method includes the steps of (1) forming a first side of a fin of a fin field effect transistor (FinFET); (2) processing the first side of the fin; and (3) forming a second side of the fin while supporting the first side of the fin. Numerous other aspects are provided.