发明名称 WAFER CLEANING AFTER VIA-ETCHING
摘要 When a semiconductor wafer bears porous dielectric materials it is still possible to perform post-via-etch cleaning of the wafer using aqueous cleaning fluids if, before and/or simultaneously with application of the aqueous cleaning fluid(s), a water-soluble organosilane or like passivation material is used to form a passivation layer on the porous dielectric material.
申请公布号 WO2006087244(A3) 申请公布日期 2007.01.11
申请号 WO2006EP02849 申请日期 2006.02.02
申请人 FREESCALE SEMICONDUCTOR, INC.;FARKAS, JANOS 发明人 FARKAS, JANOS
分类号 H01L21/02;H01L21/3105;H01L21/768 主分类号 H01L21/02
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