发明名称 |
WAFER CLEANING AFTER VIA-ETCHING |
摘要 |
When a semiconductor wafer bears porous dielectric materials it is still possible to perform post-via-etch cleaning of the wafer using aqueous cleaning fluids if, before and/or simultaneously with application of the aqueous cleaning fluid(s), a water-soluble organosilane or like passivation material is used to form a passivation layer on the porous dielectric material. |
申请公布号 |
WO2006087244(A3) |
申请公布日期 |
2007.01.11 |
申请号 |
WO2006EP02849 |
申请日期 |
2006.02.02 |
申请人 |
FREESCALE SEMICONDUCTOR, INC.;FARKAS, JANOS |
发明人 |
FARKAS, JANOS |
分类号 |
H01L21/02;H01L21/3105;H01L21/768 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|