| 发明名称 |
HIGHLY OXYGEN-SENSITIVE SILICON LAYER AND METHOD FOR OBTAINING SAME |
| 摘要 |
<p>The invention concerns a highly oxygen-sensitive silicon layer and a method for obtaining same. Said layer (2), formed on a substrate (4) for example made of SiC, has a 3x2 structure. The method for obtaining same consists in depositing silicon substantially uniformly on one surface of the substrate. The invention is applicable for example in microelectronics.</p> |
| 申请公布号 |
WO2007003638(A1) |
申请公布日期 |
2007.01.11 |
| 申请号 |
WO2006EP63856 |
申请日期 |
2006.07.04 |
| 申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE;UNIVERSITE PARIS SUD (PARIS XI);SOUKIASSIAN, PATRICK;SEMOND, FABRICE |
发明人 |
SOUKIASSIAN, PATRICK;SEMOND, FABRICE |
| 分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
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