METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR DEVICE

摘要

A method for forming a metal wire of a semiconductor device is provided to prevent an attack to a membrane of an interlayer dielectric by using photoresist used to form a trench and a via hole as a mask when a nitride layer in the via hole is etched. A first metal wire(32) is formed on a semiconductor substrate(31). An etch preventing layer(33) is formed on the whole surface of the semiconductor substrate including the first metal wire. An interlayer dielectric(34) is formed on the etch preventing layer. The interlayer dielectric is selectively removed to form a first trench having a predetermined depth from the surface. A photoresist is applied on the semiconductor substrate to be patterned. The interlayer dielectric where the first trench is formed and the interlayer nearby are selectively removed by using the patterned photoresist as a mask to form a via hole(39) and a second trench(38). The etch preventing layer exposed on a lower portion of the via hole is selectively removed by using the photoresist as a mask. A barrier metal layer is disposed in the second trench and the via hole to form a second metal wire.