发明名称 PROCESSED GAS SUPPLY STRUCTURE AND PLASMA PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a processed gas supply structure in which damage by plasma is suppressed, and to provide a processing apparatus using the processed gas structure in a processed gas supply structure for supplying plasma-activated processed gas to a plasma processing room. <P>SOLUTION: A plasma processing apparatus has a processing container holding a processed substrate in an internal space, a processes gas supply structure for supplying processed gas to the processing container, and a plasma-activation means for plasma-activating the processed gas. The processed gas supplying structure has a plurality of tubular portions having a path of the processed gas installed in the internal space, a gas hole which supplies the processed gas from the path to the internal space formed in the tubular portion, and the tubular portion is formed from a ceramic material. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007005705(A) 申请公布日期 2007.01.11
申请号 JP20050186721 申请日期 2005.06.27
申请人 TOKYO ELECTRON LTD 发明人 ODA HISAFUMI;MOROI MASAYUKI;KAWAKAMI SATOSHI;ASHIGAKI SHIGEO
分类号 H01L21/205;C23C16/455;C23C16/511;H05H1/46 主分类号 H01L21/205
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