| 发明名称 |
SURFACE PROCESSING METHOD OF SUBSTRATE AND MANUFACTURING METHOD OF GROUPS III-V COMPOUND SEMICONDUCTOR |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a surface processing method of a substrate consisting of groups III-V compound semiconductor which is made into stoichiometry and a manufacturing method of groups III-V compound semiconductor for suppressing minute roughness of the surface after epitaxial growth. <P>SOLUTION: There are provided a process for preparing a substrate which consists of groups III-V compound semiconductor (S10), and a process for washing the substrate with cleaning fluid which is added by an oxidizer while adjusting pH to 2 or more and 6.3 or less acidity (S20). <P>COPYRIGHT: (C)2007,JPO&INPIT |
| 申请公布号 |
JP2007005472(A) |
申请公布日期 |
2007.01.11 |
| 申请号 |
JP20050182217 |
申请日期 |
2005.06.22 |
| 申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
NISHIURA TAKAYUKI;KAMIMURA TOMOYOSHI |
| 分类号 |
H01L21/304;H01L21/205;H01L21/308 |
主分类号 |
H01L21/304 |
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