| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing method which can avoid irregular etching and obtain uniform processing even when an object having a pattern formed thereon having a large aperture size and a large aperture ratio is subjected to plasma processing such as etching. SOLUTION: The plasma processing method for plasma processing an object in a processing container of a plasma processing apparatus comprises a mount base for mounting the object thereon, and a ceiling member for defining a plasma processing space together with the mount base. The method includes the steps of mounting on the mount base the object having a hole pattern including openings formed thereon, the pattern being defined by openings and having an aperture width not smaller than 500μm, setting a spacing between the mount base and the ceiling member at a value exceeding 25 mm and smaller than 65 mm, and plasma processing the object by generating a plasma in the processing space. COPYRIGHT: (C)2007,JPO&INPIT
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