| 摘要 |
PROBLEM TO BE SOLVED: To provide a processing method, a processing device, and a program of a workpiece which can remove a native oxide film formed in the workpiece. SOLUTION: By a controller 100 of a thermal processing device 1, the inside of a reaction tube 2 is heated at 400°C storing a semiconductor wafer W where a native oxide film is formed. When the inside of the reaction tube 2 is heated at 400°C, the controller 100 activates chlorine contained in processing gas including chlorine supplied from a processing gas introducing tube 17. The native oxide film formed in the semiconductor wafer W is removed by supplying the activated chlorine to the semiconductor wafer W. COPYRIGHT: (C)2007,JPO&INPIT
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