| 摘要 |
PROBLEM TO BE SOLVED: To perform annealing and poling processes in a lump while preventing the discharge crack occurrence of a dielectric crystal, particularly LN crystal ingot derived from its pyroelectricity. SOLUTION: This method for producing a ferroelectric single crystal by annealing and poling after its growth comprises a process for exposing the single crystal to a reduction atmosphere at a temperature of≥500°C when cooling after growth to obtain a conductivity of 1×10<SP>-6</SP>V/cm at room temperature, and a process for: embedding the whole crystal in a powder; heating the crystal at a Currie temperature or higher in the atmosphere including oxygen by providing the electrodes in the powder; and performing the annealing and poling processes in a lump by applying a DC voltage between the electrodes. COPYRIGHT: (C)2007,JPO&INPIT
|
