Semiconductor device with effective heat-radiation

摘要

The semiconductor device has a silicon layer (SOI layer) ( 12 ) formed through a silicon oxide film ( 11 ) on a support substrate ( 10 ). A transistor (T 1 ) is formed in the SOI layer ( 12 ). The wiring ( 17 a) is connected with a source of the transistor (T 1 ) through a contact plug ( 15 a). A back metal ( 18 ) is formed on an under surface (back surface) of the support substrate ( 10 ) and said back metal ( 18 ) is connected with the wiring ( 17 a) through a heat radiating plug ( 16 ). The contact plug ( 15 a), the heat radiating plug ( 16 ) the wiring ( 17 a) and the back metal ( 18 ) is made of a metal such as aluminum, tungsten and so on which has a higher thermal conductivity than that of the silicon oxide film ( 11 ) and the support substrate ( 10 ).