| 摘要 |
An optical element comprising: a surface-emitting type semiconductor laser having an emission surface; and a photodetector element formed above the emission surface of the surface-emitting type semiconductor laser, wherein the photodetector element includes a semiconductor layer having a photoabsorption layer, the semiconductor layer having a film thickness d that satisfies a formula (1) as follows: (2m-1)lambda/4n-3lambda/16n<d<(2m-1)lambda/4n+3lambda/16n . . . (1), where m is an integer, n is a refractive index of the semiconductor layer, and lambda is a designed wavelength of the surface-emitting type semiconductor laser.
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