ENHANCED WAFER CLEANING METHOD

摘要

A method for removing post-processing residues in a single wafer cleaning system (100-2) is provided, as illustrated in Fig. 2D. The method initiates with providing a first heated fluid to a proximity head (106a-3, 106b-3) disposed over a substrate (108). Then, a meniscus of the first fluid is generated between a surface of the substrate and an opposing surface of the proximity head. The substrate is linearly moved under the proximity head.