LOW WETTING HYSTERESIS POLYSILOXANE-BASED MATERIAL AND METHOD FOR DEPOSITING SAME

摘要

The invention concerns a polysiloxane-based material having a predetermined structure or configuration such that, in the polysiloxane, the ratio between the number of linear -Si-O- bonds and the number of cyclic -Si-O- bonds is not more than 0.4 and, preferably, not more than 0.3. Such a configuration of polysiloxane provides a wetting hysteresis less than 10°, preferably less than 5°. Such a low wetting hysteresis material can be produced by chemical vapor deposition enhanced by plasma wherein is injected a precursor. The precursor is selected among cyclic organosiloxanes such as octamethylcyclotetrasiloxane and derivatives thereof and among cyclic organosilazanes, such as octamethylcyclosilazane and derivatives thereof. The ratio between the density of power dissipated in the plasma and the flow rate of injected precursor is not more than 100 W.cm^-2/mol.min^-1.