| 摘要 |
<p>A method for fabricating a flash memory device is provided to improve a gap-fill margin of an isolation layer by forming a desired thickness of an isolation layer in two steps. A trench for defining an isolation region is formed on a semiconductor substrate(10). The inside of the trench is filled with a first insulation layer(12) for filling the trench. A second insulation layer(14) for filling the trench is formed on the resultant structure. The trench region of the second insulation layer for filling the trench is patterned to form an isolation layer in which the first and the second isolation layers for filling the trench are stacked. A cleaning process is performed. A process for forming a tunnel oxide layer is performed. After a first silicon layer for a floating gate is formed on the resultant structure, a planarization process is performed until the isolation layer is exposed so that the first silicon layer for the floating gate is patterned.</p> |
