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发明名称
METHOD FOR PRODUCING A DRAM STRUCTURE WITH BURIED BIT LINES OR TRENCH CAPACITORS
摘要
申请公布号
EP1166350(B1)
申请公布日期
2007.01.10
申请号
EP20000918692
申请日期
2000.03.10
申请人
INFINEON TECHNOLOGIES AG
发明人
WILLER, JOSEF;CAPPELLANI, ANNALISA;SELL, BERNHARD
分类号
H01L21/8242;H01L21/285;H01L21/768;H01L27/108
主分类号
H01L21/8242
代理机构
代理人
主权项
地址
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