NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME

摘要

A nitride-based semiconductor LED is provided to increase light emitting efficiency greatly and generally by making uniform a diffusion path of current flowing from a p-type electrode to an n-type nitride semiconductor layer via a transparent conductive layer. An n-type nitride semiconductor layer(120) is formed on a substrate. An active layer(130) is formed on a predetermined region of the n-type nitride semiconductor layer. A p-type nitride semiconductor layer(140) is formed on the active layer. A transparent conductive layer is formed on the p-type nitride semiconductor layer, divided into a plurality of regions through the n-type electrode. An insulation layer(180) is formed on the center part of the upper surface of the transparent conductive layer, having a contact hole(185) for defining a p-type contact region wherein the contact hole is positioned in the center part of the insulation layer. A p-type electrode(160) is formed on the insulation layer, electrically connected to the transparent conductive layer through a contact hole. An n-type electrode(170) is formed on the n-type nitride semiconductor layer in which the active layer is not formed.