METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING WCN LAYER

摘要

A method for manufacturing a semiconductor device having a WCN layer is provided to increase work function of a gate electrode by thermally decomposing a source gas to form the WCN layer. A high-k dielectric(204) is formed on a substrate(200). A source gas containing a tungsten amine derivative is introduced to the high-k dielectric. The source gas is thermally decomposed to form a WCN layer(206) on the high-k dielectric. The WCN layer is patterned to form a gate electrode. The tungsten amine derivative includes a bis(tert-butylimido)bis(dimetylamido)W. A carrier gas is used for introducing the source gas to the substrate. A pressure control gas is introduced to control pressure in an active chamber for forming the WCN layer.