| 摘要 |
<p>An exposure method for forming a storage node contact hole of a semiconductor memory device with a 6F2 layout is provided to form the storage node contact hole in a predetermined pitch range by using a KrF wavelength based light source. A first exposure process is performed on a line type first region(710). The line type first region includes a first storage node contact hole forming region arranged in a horizontal direction. The first exposure process is performed by using a first exposure dose. A second exposure process is performed on a second region(720). The second region includes a second storage node contact hole. The second exposure process is performed by using a second exposure dose.</p> |
