DEVICE STRUCTURE AND FABRICATION PROCESS FOR LOW-VOLTAGE ORGANIC NANO-TRANSISTOR

摘要

A method for fabricating a low-voltage organic nano-transistor is provided to reduce an operation voltage of 20 V or higher to 2 V or lower by using a monomolecular gate insulation layer. A substrate having an oxide layer is prepared which is made of a material like plastic, silicon, glass, and the like(A). An etch process using a BOE(buffered oxide etchant) solution is performed to etch the oxide layer(B). A BOE cleaning process is performed to clean the residual BOE solution after the etch process(C). A piranha solution treatment is performed to form a native oxide layer(D). A monomolecular gate insulation layer made of an insulator is formed(E). A pentacene thin film as an organic activator is deposited on the monomolecular gate insulation layer(F). A source/drain electrode is formed on the pentacene thin film(G).