| 摘要 |
A method for fabricating a copper metal wiring of a semiconductor device is provided to improve binding force between the copper metal wiring and a diffusion preventing layer by selectively forming the diffusion preventing layer. A semiconductor substrate(200) having a lower metal wiring(202) is provided. Interlayer dielectrics(201,204,206) are formed on the semiconductor substrate to have dual damascene patterns exposing a part of the lower metal wiring. A barrier layer(210) is formed on the whole structure including the dual damascene pattern. The barrier layer part formed on a bottom of the dual damascene pattern is removed to expose an upper portion of the lower metal wiring. A copper layer is formed on the whole structure to gap-fill the dual damascene pattern. CMP(Chemical Mechanical Polishing) is performed on the copper layer until the interlayer dielectric is exposed to form a copper metal wiring(211a). Diffusion preventing layers(203,213) are selectively formed on only a surface of the copper metal wiring.
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